University of Glasgow – Edward Wasige

The High Frequency Electronics (HFE) research group at the University of Glasgow focusses on a) developing gallium nitride (GaN) transistor technologies for power and RF applications and b) on terahertz (THz) electronics based on resonant tunnelling diode technologies for emerging applications requiring joint/simultaneous communications and sensing capabilities. Based on the RF GaN device technology, the group is developing associated monolithic microwave integrated circuit (MMIC) technologies to enable the realisation of key components such as high-power amplifiers and low noise amplifiers for next generation of radar sensors and wireless transceivers. The group has also developed basic THz transceiver chips capable of short-range wireless links capable of tens of gigabits per second. Further research on this theme aims to demonstrate systems which can support communication data rates of up to terabits per second as well as sensing/imaging concurrently for situational awareness needed for emerging autonomous systems, future smart factories or holographic telepresence.