The Glasgow Epitaxy Facility (GEF) supports academic and industrial research in III-V semiconductor materials and devices, accelerating the development of next-generation photonic and electronic technologies. We provide high-quality MOCVD & MBE growth services for GaAs- and InP-based materials to academic and commercial partners, at low-to-medium volume. We also provide design and analytical services, as well as training to support partners to drive innovations that address critical technological challenges_. The GEF is the only facility in Scotland capable of delivering bespoke base epitaxy and regrowth services, fulfilling a crucial role within the critical technologies ecosystem of the Scottish Central Belt. To discuss facility access and partnership on academic or commercial projects, please contact Prof. Stephen Sweeney (stephen.j.sweeney@glasgow.ac.uk) or Dr Adam McKenzie (adam.mckenzie@glasgow.ac.uk). https://www.gla.ac.uk/research/az/jwnc/glasgowiii-vsemiconductorepitaxialgrowthfacility/